“Magnetic-field-induced micro-potential promotes charge separation in S-vacancy-rich ZIS/MoS 2 /Mo heterostructure for efficient photocatalytic H 2 evolution” (2026), by Chao Cui et al. Energy research paper. Original abstract below, unchanged. A free PDF is available.

Magnetic-field-induced micro-potential promotes charge separation in S-vacancy-rich ZIS/MoS 2 /Mo heterostructure for efficient photocatalytic H 2 evolution

Chao Cui, Bei Li, Liwei Zhu et al. · October 25, 2026 · Energy

Abstract

Enhancing charge separation in the absence of external bias remains a central challenge in photocatalytic hydrogen evolution. Herein, a sulfur-vacancy-rich ZIS/MoS2/Mo heterostructure is constructed, in which a magnetic-field-induced micro-potential is harnessed to regulate charge dynamics and enable efficient H2 evolution. Under a rotating magnetic field, metallic Mo component generates a motional electromotive force, thereby establishing a wireless internal electric field that spatially directs the migration of photogenerated electrons and holes in opposite directions. Owing to the synergistic interplay among sulfur vacancies, heterointerface engineering, and the magnetically induced micro-potential, the optimized ZISv/MoS2-x/Mo catalyst delivers a hydrogen evolution rate of 5.19 mmol·g−1·h−1, which is 10.4-fold higher than that of pristine ZIS and represents an approximately 50% enhancement relative to the non-magnetic-field condition. Meanwhile, an apparent quantum yield of 20.98% is achieved at 380 nm. Systematic experimental characterizations, together with COMSOL simulations and density functional theory (DFT) calculations, demonstrate that the induced micro-potential significantly accelerates charge carriers separation and directional transport, while sulfur vacancies act as active electron-trapping centers that further promote charge utilization efficiency. This work establishes a magnetically engineered wireless electric-field strategy for rationally manipulating charge dynamics and boosting photocatalytic performance.

Free PDF DOI: 10.26599/nr.2026.94909282