# GaN-on-Si Power Technology: Devices and Applications

“GaN-on-Si Power Technology: Devices and Applications” (2017), by Kevin Jing Chen et al. Physics and Astronomy research paper. Original abstract below, unchanged. No free PDF was found.

- Authors: Kevin Jing Chen, Oliver D. Häberlen, Alex Lidow, C. L. Tsai, Tetsuzo Ueda, Yasuhiro Uemoto, Yifeng Wu
- Published: February 27, 2017
- Field: Physics and Astronomy
- DOI: https://doi.org/10.1109/ted.2017.2657579
- Source: https://doi.org/10.1109/ted.2017.2657579

## Abstract

In this paper, we present a comprehensive review and discussion of the state-of-the-art device technology and application development of GaN-on-Si power electronics. Several device technologies for realizing normally off operation that is highly desirable for power switching applications are presented. In addition, the examples of circuit applications that can greatly benefit from the superior performance of GaN power devices are demonstrated. Comparison with other competing power device technology, such as Si superjunction-MOSFET and SiC MOSFET, is also presented and analyzed. Critical issues for commercialization of GaN-on-Si power devices are discussed with regard to cost, reliability, and ease of use.

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