# MoS 2 transistors with 1-nanometer gate lengths

“MoS 2 transistors with 1-nanometer gate lengths” (2016), by Sujay B. Desai et al. Materials Science research paper. Original abstract below, unchanged. No free PDF was found.

- Authors: Sujay B. Desai, Surabhi Rao Madhvapathy, Angada B. Sachid, Juan Pablo Llinas, Qingxiao Wang, Geun Ho Ahn, Gregory Pitner, Moon Jae Kim, Jeffrey Bokor, Chenming Calvin Hu et al.
- Published: October 6, 2016
- Field: Materials Science
- DOI: https://doi.org/10.1126/science.aah4698
- Source: https://doi.org/10.1126/science.aah4698

## Abstract

A flatter route to shorter channels High-performance silicon transistors can have gate lengths as short as 5 nm before source-drain tunneling and loss of electrostatic control lead to unacceptable leakage current when the device is off. Desai et al. explored the use of MoS 2 as a channel material, given that its electronic properties as thin layers should limit such leakage. A transistor with a 1-nm physical gate was constructed with a MoS 2 bilayer channel and a single-walled carbon nanotube gate electrode. Excellent switching characteristics and an on-off state current ratio of ∼10 6 were observed. Science , this issue p. 99

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